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| savantic semiconductor product specification silicon npn power transistors 2SC5003 description with to-3pml package high voltage switching transistor built-in damper diode applications display horizontal deflection output; switching regulator and general purpose pinning absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i cm collector current-peak 14 a i b base current 3.5 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC5003 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo base-emitter breakdown voltage i eb =300ma; i b =0 6 v v cesat collector-emitter saturation voltage i c =5a;i b =1.2a 5 v v besat base-emitter saturation voltage i c =5a;i b =1.2a 1.5 v i cbo1 collector cut-off current v cb =1200v; i e =0 100 a i cbo2 collector cut-off current v cb =1500v; i e =0 1 ma i ceo collector cut-off current v ce =800v; i e =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =5a ; v ce =5v 4 9 v fec forward voltage i ec =7a 2.0 v f t transition frequency i e =-0.5a ; v ce =12v 4 mhz c ob output capacitance v cb =10v;f=1mhz 100 pf switching times t stg storage time 4.0 s t f fall time i c =4a;i b1 =0.8a; i b2 =-1.6a;r l =50 a v cc =200v 0.2 s savantic semiconductor product specification 3 silicon npn power transistors 2SC5003 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC5003 |
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